Speaker
Description
Epitaxially grown semiconductor quantum dots (QDs) have demonstrated to be excellent sources of single photons and entangled photon pairs for quantum information and computational applications. With demonstrated on-demand single photon purities [1] and indistinguishabilities [2] exceeding 99%, QDs are a natural inclusion in quantum integrated photonics, allowing for future device scalability. QDs integrated into epitaxially grown nanowires provide a platform that combines consistent emission properties [3] and efficient photon collection [4]. A limitation of this approach is the difficulty of incorporating the quantum dot into a resonant cavity. Operating in the Purcell regime has shown to improve single photon indistinguishability—effectively operating faster than typical dephasing processes—by reducing exciton lifetimes [5].
Here we show our progress in achieving Purcell enhancement by combining silicon CBR structures with InP nanowires. We discuss design and process considerations, numerical results, and measurements of fabricated devices using photoluminescence spectroscopy. Due to the need to grow the nanowires in a controlled environment, the current implementation of this technology involves a pick-and-place technique to create the hybrid device. A major challenge in this process is matching the cavity resonance to the emission energies of a given QD. We compensate for resonance locations by studying the response of devices to incident broadband and tunable light sources. Characterized QDs can be measured and paired with suitable CBR cavities.
References
[1] P. Laferriére et al., Nano Lett 23, 3, 962-968 (2023)
[2] Y. Wei et al., Nano Lett 14, 6515-6519 (2014)
[3] P. Laferriére et al., Scientific Reports 12, 6376 (2022)
[4] E. Yeung et al., Phys Rev B 108, 195417 (2023)
[5] J. Liu et al., Nature Nanotechnology 14, 586-593 (2019)
