Speaker
Description
Highly oriented pyrolytic graphite (HOPG) structural changes caused by gallium (Ga) im-plantation at room temperature were investigated. To monitor structural changes in the sam-ples after implantation, Raman spectroscopy was used. SRIM (Stopping and Range of Ions in Matter 2013) software was applied to determine the depth profiles of Ga implanted at dif-ferent energies and the degree of damage in HOPG after implanting Ga. Accordingly, SRIM and Raman results suggest that amorphizing our HOPG sample requires a dpa above 4 dpa, which is much higher than previously reported (0.20 dpa).
Acknowledgments
The work was support by the by the Bilateral relationships between South Africa and Hungary in science and technology (S&T) under the project number 2019–2.1.11-TET-202000123