June 30, 2025 to July 4, 2025
Europe/Vienna timezone

Highly oriented pyrolytic graphite chemical bonding structure after gallium implantation

Jul 3, 2025, 3:15 PM
1h 45m
Poster only Atomic and molecular spectroscopy, photo-induced processes Poster Session 3

Speaker

Karoly Tokesi (HUN-REN Institute for Nuclear Research)

Description

Highly oriented pyrolytic graphite (HOPG) structural changes caused by gallium (Ga) im-plantation at room temperature were investigated. To monitor structural changes in the sam-ples after implantation, Raman spectroscopy was used. SRIM (Stopping and Range of Ions in Matter 2013) software was applied to determine the depth profiles of Ga implanted at dif-ferent energies and the degree of damage in HOPG after implanting Ga. Accordingly, SRIM and Raman results suggest that amorphizing our HOPG sample requires a dpa above 4 dpa, which is much higher than previously reported (0.20 dpa).

Acknowledgments
The work was support by the by the Bilateral relationships between South Africa and Hungary in science and technology (S&T) under the project number 2019–2.1.11-TET-202000123

Authors

A. Sulyok (HUN-REN Centre for Energy Research, Institute of Technical Physics and Materials Science, Bu-dapest, Hungary) G.Z. Radnóczi (HUN-REN Centre for Energy Research, Institute of Technical Physics and Materials Science, Bu-dapest, Hungary) H.A.A. Abdelbagi (Physics Department, University of Zululand, KwaDlangezwa, 3886, South Africa) J.B. Malherbe (Physics Department, University of Pretoria, Hatfield, Pretoria, South Africa) Karoly Tokesi (HUN-REN Institute for Nuclear Research) T.A.O. Jafer (Physics Department, University of Pretoria, Hatfield, Pretoria, South Africa)

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